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| BPX 43 NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPX 43 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Features q Especially suitable for applications from Bereich von 450 nm bis 1100 nm q Hohe Linearitat q Hermetisch dichte Metallbauform (TO-18) mit Basisanschlu, geeignet bis 125 C q Gruppiert lieferbar Anwendungen q Lichtschranken fur Gleich- und 450 nm to 1100 nm q High linearity q Hermetically sealed metal package (TO-18) with base connection suitable up to 125 C q Available in groups Applications q Photointerrupters q Industrial electronics q For control and drive circuits Wechsellichtbetrieb q Industrieelektronik q "Messen/Steuern/Regeln" Typ Type BPX43 BPX 43-2 BPX 43-3 BPX 43-4 BPX 43-5 Bestellnummer Ordering Code Q62702-P16 Q62702-P16-S2 Q62702-P16-S3 Q62702-P16-S4 Q 62702-P16-S5 Semiconductor Group 223 10.95 fmof6019 BPX 43 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 5 s Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Emitter-Basisspannung Emitter-base voltage Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 55 ... + 125 260 Einheit Unit C C Top; Tstg TS TS 300 C VCE IC ICS VEB Ptot RthJA 50 50 200 7 220 450 V mA mA V mW K/W Semiconductor Group 224 BPX 43 Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Fotostrom der Kollektor-Basis-Fotodiode Photocurrent of collector-base photodiode Ee = 0.5 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 VCB = 0 V, f = 1 MHz, E = 0 VEB = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 25 V, E = 0 Symbol Symbol S max Wert Value 880 450 ... 1100 Einheit Unit nm nm A LxB LxW H 0.675 1x1 2.4 ... 3.0 mm2 mm x mm mm 15 Grad deg. IPCB IPCB 11 35 A A CCE CCB CEB ICEO 23 39 47 20 ( 300) pF pF pF nA Semiconductor Group 225 BPX 43 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Symbol Symbol -2 Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V IPCE Ev = 1000 Ix, Normlicht/standard light A, IPCE VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3 Ee = 0.5 mW/cm2 Stromverstarkung Current gain Ee = 0.5 mW/cm2, VCE = 5 V 1) 1) Wert Value -3 -4 -5 Einheit Unit 0.8 ... 1.6 1.25 ... 2.5 2.0 ... 4.0 3.2 mA 3.8 6.0 9.5 15.0 mA 9 12 15 18 s t r, t f VCEsat 200 220 240 260 mV IPCE IPCB 110 170 270 430 IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group Semiconductor Group 226 BPX 43 Relative spectral sensitivity Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total power dissipation Ptot = f (TA) Output characteristics IC = f (VCE), IB = Parameter Output characteristics IC = f (VCE), IB = Parameter Dark current ICEO = f (VCE), E = 0 Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Dark current ICEO/ICEO25o = f (TA), VCE = 25 V, E = 0 Collector-emitter capacitance CCE = f (VCE), f = 1 MHz, E = 0 Semiconductor Group 227 BPX 43 Collector-base capacitance CCB = f (VCB), f = 1 MHz, E = 0 Emitter-base capacitance CEB = f (VEB), f = 1 MHz, E = 0 Directional characteristics Srel = f () Semiconductor Group 228 |
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